Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

Graphene and Graphene Nanomesh Spintronics

Spintronics, which manipulate spins but not electron charge, are highly valued as energy and thermal dissipationless systems. A variety of materials are challenging the realization of spintronic devices. Among those, graphene, a carbon mono-atomic layer, is very promising for efficient spin manipulation and the creation of a full spectrum of beyond-CMOS spin-based nano-devices. In the present a...

Spin Polarized Current Phenomena in Magnetic Tunnel Junctions a Dissertation Submitted to the Department of Applied Physics and the Committee on Graduate Studies of Stanford University in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy

Spin polarized current is of significant importance both scientifically and technologically. Recent advances in film growth and device fabrication in spintronics make possible an entirely new class of spin-based devices. An indispensable element in all these devices is the magnetic tunnel junction (MTJ) which has two ferromagnetic electrodes separated by an insulator barrier of atomic scale. Wh...

THESIS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY Spin Transport in Two-Dimensional Material Heterostructures

Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. Additionally, the interest in newly discovered two-dimensional semiconductors (2D...

First-principles Study of Spintronic Phenomena in Magnetic Tunnel Junctions and Graphene

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When...